?002 fairchild semiconductor corporation RHRD4120, RHRD4120s rev. b RHRD4120, RHRD4120s 4a, 1200v hyperfast diodes the RHRD4120 and RHRD4120s are hyperfast diodes with soft recovery characteristics (t rr < 60ns). they have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. these devices are intended for use as freewheeling/clamping diodes and recti?rs in a variety of switching power supplies and other power switching applications. their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, reducing power loss in the switching transistors formerly development type ta49056. symbol features hyperfast with soft recovery. . . . . . . . . . . . . . . . . . <60ns operating temperature . . . . . . . . . . . . . . . . . . . . . . 175 o c reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200v avalanche energy rated planar construction applications switching power supplies power switching circuits general purpose packaging jedec style to-251 jedec style to-252 ordering information part number package brand RHRD4120 to-251 hr4120 RHRD4120s to-252 hr4120 note: when ordering, use the entire part number. add the suf? 9a to obtain the to-252aa variant in the tape and reel, i.e., RHRD4120s9a. k a anode cathode cathode (flange) anode cathode cathode (flange) absolute maximum ratings t c = 25 o c, unless otherwise speci?d RHRD4120, RHRD4120s units peak repetitive reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v rrm 1200 v working peak reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v rwm 1200 v dc blocking voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v r 1200 v average recti?d forward current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i f(av) (t c = 147.5 o c) 4a repetitive peak surge current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .i frm (square wave, 20khz) 8a nonrepetitive peak surge current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i fsm (halfwave, 1 phase, 60hz) 40 a maximum power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 50 w avalanche energy (see figures 9 and 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . e avl 10 mj operating and storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t stg , t j -65 to 175 o c maximum lead temperature for soldering (leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t l 300 o c package body for 10s, see tech brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t pkg 260 o c data sheet january 2002
?002 fairchild semiconductor corporation RHRD4120, RHRD4120s rev. b electrical speci?ations t c = 25 o c, unless otherwise speci?d symbol test condition min typ max units v f i f = 4a - - 3.2 v i f = 4a, t c = 150 o c - - 2.6 v i r v r = 1200v - - 100 a v r = 1200v, t c = 150 o c - - 500 a t rr i f = 1a, di f /dt = 100a/ s--60ns i f = 4a, di f /dt = 100a/ s--70ns t a i f = 4a, di f /dt = 100a/ s - 40 - ns t b i f = 4a, di f /dt = 100a/ s - 25 - ns q rr i f = 4a, di f /dt = 100a/ s - 140 - nc c j v r = 10v, i f = 0a - 15 - pf r jc --3 o c/w definitions v f = instantaneous forward voltage (pw = 300 s, d = 2%). i r = instantaneous reverse current. t rr = reverse recovery time (see figure 8), summation of t a + t b . t a = time to reach peak reverse current (see figure 8). t b = time from peak i rm to projected zero crossing of i rm based on a straight line from peak i rm through 25% of i rm (see figure 8). q rr = reverse recovery charge. c j = junction capacitance. r jc = thermal resistance junction to case. pw = pulse width. d = duty cycle. typical performance curves figure 1. forward current vs forward voltage figure 2. reverse current vs reverse voltage v f , forward voltage (v) 1 20 0.5 10 0 0.5 1 1.5 2 2.5 3 3.5 4.5 4 100 o c 25 o c 175 o c i f , forward current (a) v r , reverse voltage (v) 0 400 800 1200 600 1000 100 0.01 0.1 1 10 200 0.001 100 o c 25 o c 175 o c i r , reverse current ( a) RHRD4120, RHRD4120s
?002 fairchild semiconductor corporation RHRD4120, RHRD4120s rev. b figure 3. t rr , t a and t b curves vs forward current figure 4. t rr , t a and t b curves vs forward current figure 5. t rr , t a and t b curves vs forward current figure 6. current derating curve typical performance curves (continued) 0.5 0 30 15 75 4 1 45 60 t rr t a t b t , recovery times (ns) i f , forward current (a) t c = 25 o c, di f /dt = 100a/ s 0.5 0 60 40 20 100 4 1 80 t rr t b t , recovery times (ns) i f , forward current (a) t a t c = 100 o c, di f /dt = 100a/ s 0.5 0 50 25 125 4 1 75 100 t rr t b t, recovery times (ns) t a i f , forward current (a) t c = 175 o c, di f /dt = 100a/ s 5 1 0 125 135 155 175 165 2 3 4 t c , case temperature ( o c) 145 dc sq. wave i f(av) , average forward current (a) test circuits and waveforms figure 7. t rr test circuit figure 8. t rr waveforms and definitions r g l v dd igbt current sense dut v ge t 1 t 2 v ge amplitude and t 1 and t 2 control i f r g control di f /dt + - dt di f i f t rr t a t b 0 i rm 0.25 i rm RHRD4120, RHRD4120s
?002 fairchild semiconductor corporation RHRD4120, RHRD4120s rev. b figure 9. avalanche energy test circuit figure 10. avalanche current and voltage waveforms test circuits and waveforms (continued) dut current sense + lr v dd r < 0.1 ? e avl = 1/2li 2 [v r(avl) /(v r(avl) - v dd )] q 1 = igbt (bv ces > dut v r(avl) ) - v dd q 1 i max = 1a l = 20mh iv t 0 t 1 t 2 i l v avl t i l RHRD4120, RHRD4120s
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic? optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? rev. h4 a acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a star*power is used under license vcx?
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